Ch. 1 | | Novel Device Concepts to Overcome MOSFET Limits by Ulrich Abelein and Ignaz Eisele | | 1 |
Ch. 2 | | Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures by Manuel Aldegunde and Antonio J. Garcia-Loureiro and Natalia Seoane and Karol Kalna | | 61 |
Ch. 3 | | Cryogenic Operation of Power MOSFETs by Hua Ye and Pradeep Haldar | | 85 |
Ch. 4 | | Redesign and Optimization of MOSFET Devices by Petru Andrei | | 115 |
Ch. 5 | | Thin and Ultra-Thin SiO[subscript 2] Gate Oxide in Metal-Oxide-Semiconductor Structures under Electrical Stresses: Reliability Prediction and Degradation Mechanism Models by C. Petit and D. Zander | | 169 |
Ch. 6 | | Some Medical Applications of MOSFETs in Radiation Therapy: Surface Dose and Electron Backscatter Measurements with Monte Carlo Simulations by James Chun Lam Chow | | 217 |
Ch. 7 | | Surrounding-Gate MOSFETs for Transistor Scaling: Devices, Fabrication and Modeling by Yijian Chen | | 253 |
Ch. 8 | | Quantum, Self-heating and Hot Electron Effects of Si-based Double-Gate MOSFET and GaN-based MOS-HFET by Xiaoshuang Chen and Weida Hu and Wei Lu | | 275 |
Ch. 9 | | Bulk FinFETs: Fabrication and Threshold Voltage by Jong-Ho Lee | | 301 |
Ch. 10 | | Discussion on l/f Noise in CMOS Transistors: Modelling-Simulation and Measurement Techniques by T. Noulis and S. Siskos and L. Bary and G. Sarrabayrouse | | 355 |
Ch. 11 | | A Rigorous Analysis of the Parameters which Govern the SILC in MOSFETs with Oxide Thickness in the 1-2 Nanometer Range by D. Bauza and G. Ghibaudo and F. Rahmoune | | 381 |
Ch. 12 | | Analog and Digital Circuit Functionality under the Influence of Gate Oxide Degradation and Breakdown by R. Rodriguez and J. Martin-Martinez and R. Fernandez and M. Nafria and X. Aymerich | | 401 |
Ch. 13 | | MOSFETs Programmable Conductance: The Way of VLSI Implementation for Emerging Applications from Biologically Plausible Neuromorphic Devices to Mobile Communications by I. S. Han | | 421 |
| | Index | | 441 |