Electromigration

Electromigration


Yazar Christou
Yayınevi John Wiley & Sons
ISBN 9780471584896
Baskı yılı 1993
Sayfa sayısı 360
Ağırlık 0.68 kg
Stok durumu Tükendi   

Electromigration is a mass transport effect in metals under high current densities, which causes the metal atoms to migrate away from a high current density point and leads to the failure of integrated circuits. It is therefore an important reliability issue. This study reviews the topic for both the silicon and GaAs technologies. It surveys the status of electromigration physics in microelectronics, and summarizes various rate controlling details, including an investigation of temperature dependence.
1 Reliability and Electromigration Degradation of GaAs Microwave Monolithic Integrated Circuits by Aris Christou 1
2 Simulation and Computer Models for Electromigration by Pin Fang Tang 27
3 Temperature Dependencies on Electromigration by Michael Pecht and Pradeep Lall 79
4 Electromigration and Related Failure Mechanisms in VLSI Metallizations by Aris Christou and M. C. Peckerar 105
5 Metallic Electromigration Phenomena by Simeon J. Krumbein 139
6 Theoretical and Experimental Study of Electromigration by Jian Hui Zhao 167
7 GaAs on Silicon Performance and Reliability by P. Panayotatos and A. Georgakilas and N. Kornilios 235
8 Electromigration and Stability of Multilayer Metal-Semiconductor Systems on GaAs by Aris Christou 263
9 Electrothermomigration Theory and Experiments in Aluminum Thin Film Metallizations by Aris Christou 291
10 Reliable Metallization for VLSI by M. C. Peckerar 317
Index 339